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| PD - 93848A IRF7750 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.1mm) Available in Tape & Reel TSSOP-8 VDSS = -20V RDS(on) = 0.030 Description HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 4.7 3.8 38 1.0 0.64 0.008 12 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 125 Units C/W www.irf.com 1 5/25/2000 IRF7750 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.45 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, I D = -250A 0.012 --- V/C Reference to 25C, ID = -1mA --- 0.030 VGS = -4.5V, I D = -4.7A --- 0.055 VGS = -2.5V, I D = -3.8A --- -1.2 V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -4.7A --- -1.0 VDS = -20V, VGS = 0V A --- -25 VDS = -16V, VGS = 0V, TJ = 70C --- -100 VGS = -12V nA --- 100 VGS = 12V 26 39 ID = -4.7A 3.9 5.8 nC VDS = -16V 8.0 12 VGS = -5.0V 15 --- VDD = -10V 54 --- ID = -1.0A ns 180 --- RD = 10 210 --- RG = 24 1700 --- VGS = 0V 380 --- pF VDS = -15V 270 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 26 16 -1.0 A -38 -1.2 39 24 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.0A, VGS = 0V TJ = 25C, IF = -1.0A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7750 1000 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 1000 -I D , Drain-to-Source Current (A) 100 10 -I D , Drain-to-Source Current (A) 100 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 10 -1.50V 1 1 -1.50V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) TJ = 25 C -ISD , Reverse Drain Current (A) 10 TJ = 150 C 10 TJ = 150 C 1 TJ = 25 C 1 1.5 V DS = -15V 20s PULSE WIDTH 2.0 2.5 3.0 0.1 0.2 0.4 0.6 0.8 V GS = 0 V 1.0 1.2 -VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7750 2500 2000 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10 ID = -4.7A V DS =-16V 8 C, Capacitance (pF) Ciss 1500 6 1000 4 500 Coss Crss 2 0 1 10 100 0 0 10 20 30 40 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -V GS(th) , Variace ( V ) -ID , Drain Current (A) I 0.80 100 10us 10 100us 1ms 1 10ms 0.60 ID = -250A 0.40 0.20 -75 -50 -25 0 25 50 75 100 125 150 0.1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 T J , Temperature ( C ) -VDS , Drain-to-Source Voltage (V) Fig 7. Threshold Voltage Vs. Temperature Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7750 5.0 20 4.0 16 -ID , Drain Current (A) 2.0 Power (W) 25 50 75 100 125 150 3.0 12 8 1.0 4 0.0 0 0.01 0.10 1.00 10.00 100.00 TC , Case Temperature ( C) Time (sec) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Power Vs. Time 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 PDM t1 t2 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7750 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -4.7A R DS (on) , Drain-to-Source On Resistance ( ) 2.0 0.08 1.5 0.06 VGS = -2.5V 0.04 1.0 0.5 0.02 VGS = -4.5V 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 0.00 0 10 20 30 40 -I D , Drain Current (A) TJ , Junction Temperature ( C) Fig 12. Normalized On-Resistance Vs. Temperature Fig 13. Typical On-Resistance Vs. Drain Current R DS(on) , Drain-to -Source On Resistance ( ) 0.08 0.06 0.04 ID = -4.7A 0.02 0.00 2.0 2.5 3.0 3.5 -V GS, Gate -to -Source Voltage (V) Fig 14. Typical On-Resistance Vs. Gate Voltage 6 www.irf.com IRF7750 TSSOP-8 Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 5/2000 www.irf.com 7 |
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